Packaged in 3 mm, 16-lead PQFN package, MAAPSS0095 is rated at 1.6 W and includes bias networks that can be controlled by analog signals to switch from active to stand-by modes. Exhibiting greater than 1 W DRM spectral mask linearity, MAAP-007649-000100 is 2 W HBT power amplifier with 800-1,000 MHz frequency range, with 19 dB gain, 15 dB OIP3/P1dB figure of merit, and 50% PAE @ P1dB. Both products are RoHS-compliant and fabricated on HBT GaAs process.
High Power RoHS Amplifiers Ideally Suited for RFID Readers and other Applications LOWELL, Mass. -- June 13, 2006 - M/A-COM, a business unit of Tyco Electronics and a leading provider of wireless radio frequency (RF), microwave and millimeter wave components, today expanded its 'RFID by M/A-COM' offerings announcing two new RoHS compliant power amplifiers, the MAAPSS0095 and the MAAP-007649-000100, for applications requiring high power and high efficiency such as radio frequency identification (RFID), remote meter reading, electronic vehicle toll systems and industrial, scientific and medical (ISM) applications.
"M/A-COM's product development strategy for the MAAPSS0095 and the MAAP-007649-000100 was to offer our customers power amplifier solutions that can be used for RFID applications worldwide, as well as other applications that require high power and efficiency," said Tom Galluccio, product line manager, Integrated Circuits Products Group, M/A-COM, Inc. "Because these devices are wideband, users can rely on a single power amplifier instead of multiple solutions for different RFID frequency bands anywhere in the world. Additionally, the product's high efficiency performance (>50%) makes these power amplifier's ideal for mobile applications and RFID reader systems."
The MAAPSS0095 is designed to be a 1.6 watt device packaged in a RoHS compliant 3mm, 16-lead PQFN package and includes bias networks that can be controlled by analog signals to switch from active to stand-by modes. It is fabricated on a low-cost, high reliability HBT GaAs process. Each MAAPSS0095 is 100% radio frequency (RF) tested to ensure performance compliance. The wide bandwidth and high efficiency of the MAAPSS0095 makes it the ideal amplifier solution for RFID applications in the U.S., Europe and Japan.
The MAAP-007649-000100 is designed as a 2 watt HBT power amplifier that displays ultra high linearity for RFID applications, with greater than 1 watt DRM spectral mask linearity. Frequency coverage is designed to be between 800 to 1000 MHz, with 19 dB gain, 15 dB OIP3 / P1dB figure of merit, and 50% PAE @ P1dB. It is fabricated on a low-cost, high reliability HBT GaAs process. On chip bias networks allow for power down control capability. Evaluation boards optimized for RFID bands are available. The MAAP-007649-000100 can also be used in a variety of cellular infrastructure applications. The device is available in a surface mount 4mm 16 Lead PQFN package, and the assembly is RoHS compliant.
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Electronics & Innovation, E&I, designs manufactures and provides technical support for broadband linear RF amplifiers. In addition to our standard products, we specialize in building custom RF amplifiers.